BC369,112
- Mfr.Part #
- BC369,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 20V 1A TO92-3
- Stock
- 26,704
- In Stock :
- 26,704
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Peak Reflow Temperature (Cel) :
- 250
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 0.83W
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 830mW
- Number of Terminations :
- 3
- Base Part Number :
- BC369
- Current - Collector (Ic) (Max) :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- O-PBCY-T3
- Frequency - Transition :
- 140MHz
- Packaging :
- Bulk
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Reach Compliance Code :
- Unknown
- Transition Frequency :
- 140MHz
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Published :
- 2000
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Datasheets
- BC369,112
BC369,112 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC369,112 Overview
This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 140MHz.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.
BC369,112 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 140MHz
BC369,112 Applications
There are a lot of NXP USA Inc.
BC369,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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