BC368,112
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- Mfr.Part #
- BC368,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A TO92-3
- Stock
- 32,229
- In Stock ：
- 32,229
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-PBCY-T3
- Packaging :
- Bulk
- Base Part Number :
- BC368
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 0.83W
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 170MHz
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 250
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Power - Max :
- 830mW
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Published :
- 2000
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 170MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Surface Mount :
- No
- Configuration :
- Single
- HTS Code :
- 8541.21.00.75
- VCEsat-Max :
- 0.5 V
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 1A
- Polarity/Channel Type :
- NPN
- Collector-Base Capacitance-Max :
- 40pF
- Terminal Finish :
- Tin
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Qualification Status :
- Not Qualified
- Datasheets
- BC368,112
BC368,112 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC368,112 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 170MHz.There is a 20V maximal voltage in the device due to collector-emitter breakdown.
BC368,112 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 170MHz
BC368,112 Applications
There are a lot of NXP USA Inc.
BC368,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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