BAV70S135

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Reverse Voltage :

100V

Mounting Type :

Surface Mount

Output Current-Max :

0.25A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Published :

2007

Element Configuration :

Common Cathode

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Height :

1.1mm

Diode Element Material :

SILICON

Peak Reverse Current :

500nA

Diode Configuration :

2 Pair Common Cathode

Packaging :

Tape and Reel (TR)

Pin Count :

6

Max Reverse Voltage (DC) :

100V

Current - Reverse Leakage @ Vr :

500nA @ 80V

Max Repetitive Reverse Voltage (Vrrm) :

100V

Number of Pins :

6

Average Rectified Current :

250mA

Contact Plating :

Tin

Reverse Recovery Time :

4 ns

Power Dissipation-Max :

0.35W

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Current - Average Rectified (Io) :

250mA DC

Forward Current :

250mA

Ambient Temperature Range High :

150°C

ECCN Code :

EAR99

Recovery Time :

4 ns

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Base Part Number :

BAV70S

Forward Voltage :

1.25V

Max Reverse Leakage Current :

500nA

Diode Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

30

Max Forward Surge Current (Ifsm) :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature - Junction :

150°C Max

RoHS Status :

ROHS3 Compliant

Peak Non-Repetitive Surge Current :

4A

HTS Code :

8541.10.00.70

Number of Elements :

4

Terminal Form :

Gull wing

Number of Terminations :

6

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Surge Current :

4A

Capacitance :

1.5pF