BAV23,235

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Reverse Recovery Time :

50 ns

Max Reverse Leakage Current :

100nA

Recovery Time :

50 ns

Forward Voltage :

1.25V

Factory Lead Time :

4 Weeks

Output Current-Max :

0.125A

Power Dissipation-Max :

0.25W

RoHS Status :

ROHS3 Compliant

Current - Average Rectified (Io) :

225mA DC

Number of Elements :

2

Forward Current :

225mA

Pin Count :

4

Number of Terminations :

4

Diode Type :

Standard

Terminal Finish :

Tin (Sn)

Base Part Number :

BAV23

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Diode Element Material :

SILICON

Lead Free :

Lead Free

Number of Pins :

4

Current - Reverse Leakage @ Vr :

100nA @ 200V

Mount :

Surface Mount

Diode Configuration :

2 Independent

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Min Operating Temperature :

-65°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Package / Case :

TO-253-4, TO-253AA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Average Rectified Current :

225mA

Operating Temperature - Junction :

150°C Max

Max Reverse Voltage (DC) :

200V

Published :

2004

Packaging :

Tape and Reel (TR)

Max Repetitive Reverse Voltage (Vrrm) :

250V

JESD-609 Code :

e3

Terminal Position :

Dual

Max Surge Current :

9A

Additional Feature :

Halogen Free

Max Operating Temperature :

150°C

Peak Non-Repetitive Surge Current :

9A