BAV21,143

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Mount :

Through Hole

Number of Pins :

2

Max Repetitive Reverse Voltage (Vrrm) :

250V

Case Connection :

Isolated

Pin Count :

2

Average Rectified Current :

250mA

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Diode Element Material :

SILICON

JESD-609 Code :

e3

Radiation Hardening :

No

Power Dissipation-Max :

0.4W

Operating Temperature - Junction :

175°C Max

Factory Lead Time :

6 Weeks

Diode Type :

Standard

Current - Reverse Leakage @ Vr :

100nA @ 200V

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Min Operating Temperature :

-65°C

Published :

2007

Number of Elements :

1

Forward Voltage :

1.25V

RoHS Status :

ROHS3 Compliant

Current - Average Rectified (Io) :

250mA DC

Max Operating Temperature :

175°C

Contact Plating :

Tin

Mounting Type :

Through Hole

Peak Non-Repetitive Surge Current :

9A

HTS Code :

8541.10.00.70

Reverse Recovery Time :

50 ns

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Packaging :

Tape and Box (TB)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Wire

ECCN Code :

EAR99

Forward Current :

250mA

Element Configuration :

Single

Max Reverse Voltage (DC) :

200V

Package / Case :

DO-204AH, DO-35, Axial

Number of Terminations :

2

Base Part Number :

BAV21

Peak Reverse Current :

100nA