BAV21,113

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

RoHS Status :

ROHS3 Compliant

Pin Count :

2

Published :

2007

Forward Voltage :

1.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Terminal Form :

Wire

Factory Lead Time :

6 Weeks

Forward Current :

250mA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Type :

Standard

Surface Mount :

No

ECCN Code :

EAR99

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Diode Element Material :

SILICON

Current - Reverse Leakage @ Vr :

100nA @ 200V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Operating Temperature (Max) :

175°C

Power Dissipation-Max :

0.4W

HTS Code :

8541.10.00.70

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Current - Average Rectified (Io) :

250mA DC

Operating Temperature - Junction :

175°C Max

Package / Case :

DO-204AH, DO-35, Axial

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Number of Pins :

2

Case Connection :

Isolated

Base Part Number :

BAV21

JESD-609 Code :

e3

Number of Terminations :

2

Reverse Recovery Time :

50ns

Qualification Status :

Not Qualified

Reverse Current-Max :

0.1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Voltage - DC Reverse (Vr) (Max) :

200V