BAT74S,115

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Forward Current :

200mA

JESD-609 Code :

e3

Forward Voltage :

800mV

Peak Reflow Temperature (Cel) :

260

Speed :

Small Signal =< 200mA (Io), Any Speed

Lead Free :

Lead Free

Radiation Hardening :

No

Width :

6.35mm

Max Surge Current :

600mA

Max Power Dissipation :

240mW

ECCN Code :

EAR99

Weight :

4.535924g

Max Reverse Leakage Current :

2µA

Average Rectified Current :

200mA

Number of Terminations :

6

Height :

6.35mm

Length :

6.35mm

Max Reverse Voltage (DC) :

30V

Number of Pins :

6

Mounting Type :

Surface Mount

Recovery Time :

5 ns

Voltage - Forward (Vf) (Max) @ If :

800mV @ 100mA

Power Dissipation :

240mW

Base Part Number :

BAT74S

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Current - Average Rectified (Io) :

200mA DC

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Contact Plating :

Tin

Package / Case :

6-TSSOP, SC-88, SOT-363

Diode Configuration :

2 Independent

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

125°C

Diode Type :

Schottky

Diode Element Material :

SILICON

Published :

2003

Peak Non-Repetitive Surge Current :

600mA

Time@Peak Reflow Temperature-Max (s) :

30

Output Current-Max :

0.2A

Mount :

Surface Mount

Terminal Position :

Dual

Peak Reverse Current :

2µA

Reverse Recovery Time :

5 ns

Current - Reverse Leakage @ Vr :

2μA @ 25V

Max Repetitive Reverse Voltage (Vrrm) :

30V

Number of Elements :

2

Pin Count :

6

HTS Code :

8541.10.00.70

Operating Temperature - Junction :

125°C Max

RoHS Status :

ROHS3 Compliant