BAT54VV,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Peak Reflow Temperature (Cel) :

260

Length :

1.6002mm

Max Forward Surge Current (Ifsm) :

600mA

Number of Pins :

6

Factory Lead Time :

4 Weeks

Voltage - Forward (Vf) (Max) @ If :

800mV @ 100mA

Terminal Position :

Dual

Case Code (Imperial) :

0603

Radiation Hardening :

No

Voltage - Rated :

50V

Max Operating Temperature :

125°C

Forward Voltage :

800mV

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

Contact Plating :

Tin

Output Current-Max :

0.2A

Number of Elements :

3

Speed :

Small Signal =< 200mA (Io), Any Speed

REACH SVHC :

No SVHC

Power Dissipation :

170mW

Max Repetitive Reverse Voltage (Vrrm) :

30V

Current - Reverse Leakage @ Vr :

2μA @ 25V

Max Surge Current :

600mA

Lead Free :

Lead Free

Height :

600μm

Number of Terminations :

6

Terminal Form :

Flat

Diode Configuration :

3 Independent

Peak Non-Repetitive Surge Current :

600mA

Time@Peak Reflow Temperature-Max (s) :

40

Case Code (Metric) :

1608

Tolerance :

1%

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

787.4μm

ECCN Code :

EAR99

Max Reverse Leakage Current :

2µA

Diode Type :

Schottky

Pin Count :

6

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-65°C~125°C

Forward Current :

200mA

Base Part Number :

BAT54VV

Capacitance :

82pF

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.10.00.70

Published :

2004

Peak Reverse Current :

2µA

Diode Element Material :

SILICON

Thickness :

889μm

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

Current - Average Rectified (Io) :

200mA DC

Packaging :

Tape and Reel (TR)

Average Rectified Current :

200mA

Max Power Dissipation :

170mW