BAT54VV,115
- Mfr.Part #
- BAT54VV,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- DIODE SCHOTTKY 30V 200MA SOT666
- Stock
- 44,244
- In Stock :
- 44,244
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Number of Pins :
- 6
- HTS Code :
- 8541.10.00.70
- Max Repetitive Reverse Voltage (Vrrm) :
- 30V
- Diode Type :
- Schottky
- Number of Elements :
- 3
- ECCN Code :
- EAR99
- Average Rectified Current :
- 200mA
- Case Code (Imperial) :
- 0603
- Diode Configuration :
- 3 Independent
- Published :
- 2004
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Power Dissipation :
- 170mW
- Forward Current :
- 200mA
- Width :
- 787.4μm
- Forward Voltage :
- 800mV
- Peak Non-Repetitive Surge Current :
- 600mA
- Pin Count :
- 6
- Package / Case :
- SOT-563, SOT-666
- Min Operating Temperature :
- -55°C
- Base Part Number :
- BAT54VV
- Factory Lead Time :
- 4 Weeks
- Output Current-Max :
- 0.2A
- Mounting Type :
- Surface Mount
- Voltage - Forward (Vf) (Max) @ If :
- 800mV @ 100mA
- REACH SVHC :
- No SVHC
- Terminal Form :
- Flat
- Case Code (Metric) :
- 1608
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Current - Average Rectified (Io) :
- 200mA DC
- Capacitance :
- 82pF
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Tolerance :
- 1%
- Current - Reverse Leakage @ Vr :
- 2μA @ 25V
- Diode Element Material :
- SILICON
- Max Surge Current :
- 600mA
- Voltage - Rated :
- 50V
- Peak Reverse Current :
- 2µA
- Max Forward Surge Current (Ifsm) :
- 600mA
- Max Power Dissipation :
- 170mW
- Height :
- 600μm
- Max Operating Temperature :
- 125°C
- Max Reverse Leakage Current :
- 2µA
- Length :
- 1.6002mm
- Number of Terminations :
- 6
- Thickness :
- 889μm
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature - Junction :
- -65°C~125°C
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BAT54VV,115

Schottky Rectifier Diode 3 Independent Small Signal =< 200mA (Io), Any Speed -65°C~125°C 200mA 3-Element SOT-563, SOT-666 Surface Mount
BAT54VV,115 Overview
There will be no operation of this device when the forward voltage is set to 800mV.0.2A is its maximum output voltage.Monarrayoring the surge current and preventing array from exceeding 600mA should be the rule.When the forward voltage is set to 200mA, this device will operate.Capacitance in this device is approximately 82pF farads.In devices such as this one, reverse voltage peak is set at 2μA.Its maximal reverse leakage current is 2μA, which is the current from that semiconductor device when the device is reverse biased.As a derivative of its primary action, this electronic or electrical device generates 170mW of heat.170mW heat is produced by this electronic or electrical device in the largest amount (energy loss or waste).
BAT54VV,115 Features
800mV forward voltage
a maximum output voltage of 0.2A
82pF farads
a peak voltage of 2μA
a reverse voltage peak of 2μA
BAT54VV,115 Applications
There are a lot of Nexperia USA Inc. BAT54VV,115 applications of rectifier diode array.
-
Rectifiers in switch mode power supplies (SMPS)
-
Free wheeling diode in low voltage converters
-
Rectifier for drives applications
-
Rectifiers for UBS
-
Crowbar applications
-
Battery chargers
-
General Rectification
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