BAT160A,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Diode Type :

Schottky

Max Reverse Leakage Current :

350μA

Pin Count :

4

Output Current-Max :

1A

Terminal Position :

Dual

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Lead Free :

Lead Free

Mount :

Surface Mount

Peak Reverse Current :

350μA

Min Operating Temperature :

-65°C

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Contact Plating :

Tin

Additional Feature :

LOW SWITCHING LOSS

Max Surge Current :

10A

Number of Pins :

73

Diode Element Material :

SILICON

JESD-30 Code :

R-PDSO-G4

Average Rectified Current :

1A

Package / Case :

TO-261-4, TO-261AA

Radiation Hardening :

No

Forward Current :

1A

Diode Configuration :

1 Pair Common Anode

Peak Non-Repetitive Surge Current :

10A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Reference Standard :

IEC-134

Current - Average Rectified (Io) :

1A DC

Voltage - Forward (Vf) (Max) @ If :

650mV @ 1A

Mounting Type :

Surface Mount

Forward Voltage :

850mV

Current - Reverse Leakage @ Vr :

350μA @ 60V

Element Configuration :

Common Anode

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

HTS Code :

8541.10.00.70

Operating Temperature - Junction :

150°C Max

Max Reverse Voltage (DC) :

60V

Base Part Number :

BAT160A

Max Repetitive Reverse Voltage (Vrrm) :

60V

Number of Terminations :

4

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)