BAT15099E6433HTMA1
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- Mfr.Part #
- BAT15099E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-253-4, TO-253AA
- Datasheet
- Download
- Description
- DIODE SCHOTTKY 4V 100MW SOT143-4
- Stock
- 1,912
- In Stock ：
- 1,912
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - RF
- Diode Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Elements :
- 2
- Package / Case :
- TO-253-4, TO-253AA
- Base Part Number :
- BAT15-099
- Factory Lead Time :
- 4 Weeks
- Diode Capacitance-Max :
- 0.35pF
- Frequency Band :
- X B
- Forward Voltage :
- 410mV
- Case Connection :
- CATHODE
- Mount :
- Surface Mount
- Max Repetitive Reverse Voltage (Vrrm) :
- 4V
- Current Rating :
- 110mA
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Lead Free :
- Lead Free
- Capacitance @ Vr, F :
- 0.35pF @ 0V 1MHz
- Forward Current :
- 110mA
- Diode Type :
- Schottky - 2 Independent
- Configuration :
- SEPARATE, 2 ELEMENTS
- Terminal Form :
- Gull wing
- Type of Schottky Barrier :
- LOW BARRIER
- Voltage - Rated DC :
- 4V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Number of Terminations :
- 4
- Max Current Rating :
- 110mA
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 100mW
- Datasheets
- BAT15099E6433HTMA1
Schottky - 2 Independent 0.35pF @ 0V 1MHz 150°C TJ 4 Terminations SILICON DUAL Tape & Reel (TR) TO-253-4, TO-253AA
BAT15099E6433HTMA1 Overview
RF diode is recommended that the system's forward voltage is kept above 410mV.For this part, the current rating is 110mA.
BAT15099E6433HTMA1 Features
BAT15099E6433HTMA1 Applications
There are a lot of Infineon Technologies
BAT15099E6433HTMA1 applications of RF diodes.
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
- Low-loss, high-power limiters
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