BAS70L,315

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Diode Type :

Schottky

Diode Element Material :

SILICON

Peak Reverse Current :

10μA

HTS Code :

8541.10.00.70

Current - Average Rectified (Io) :

70mA DC

Speed :

Small Signal =< 200mA (Io), Any Speed

Operating Temperature - Junction :

150°C Max

Mount :

Surface Mount

Max Surge Current :

100mA

Radiation Hardening :

No

ECCN Code :

EAR99

Average Rectified Current :

70mA

Pin Count :

2

Forward Current :

70mA

Number of Elements :

1

Max Reverse Leakage Current :

10μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Peak Non-Repetitive Surge Current :

100mA

Terminal Finish :

Tin (Sn)

Voltage - Forward (Vf) (Max) @ If :

1V @ 15mA

Forward Voltage :

1V

Time@Peak Reflow Temperature-Max (s) :

40

Reference Standard :

IEC-60134

Current - Reverse Leakage @ Vr :

10μA @ 70V

Max Reverse Voltage (DC) :

70V

Case Connection :

CATHODE

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Base Part Number :

BAS70L

Number of Terminations :

2

Max Repetitive Reverse Voltage (Vrrm) :

70V

Mounting Type :

Surface Mount

Number of Pins :

2

Min Operating Temperature :

-65°C

Element Configuration :

Single

Package / Case :

SOD-882

Terminal Position :

BOTTOM

Output Current-Max :

0.07A

RoHS Status :

ROHS3 Compliant