BAS70-07V,115

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Max Surge Current :

100mA

Number of Elements :

2

Factory Lead Time :

4 Weeks

Peak Reverse Current :

10μA

Published :

2001

Terminal Position :

Dual

Current - Reverse Leakage @ Vr :

10μA @ 70V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

JESD-609 Code :

e3

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Form :

Flat

Operating Temperature - Junction :

150°C Max

Lead Free :

Lead Free

Peak Non-Repetitive Surge Current :

100mA

Speed :

Small Signal =< 200mA (Io), Any Speed

Voltage - Forward (Vf) (Max) @ If :

1V @ 15mA

Diode Configuration :

2 Independent

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Diode Element Material :

SILICON

Diode Type :

Schottky

Min Operating Temperature :

-65°C

Max Repetitive Reverse Voltage (Vrrm) :

70V

Forward Current :

70mA

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

6

Current - Average Rectified (Io) :

70mA DC

HTS Code :

8541.10.00.70

Peak Reflow Temperature (Cel) :

260

Max Reverse Voltage (DC) :

70V

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Average Rectified Current :

70mA

Package / Case :

SOT-563, SOT-666

Output Current-Max :

0.07A

Number of Pins :

6

Max Reverse Leakage Current :

10μA