BAS32L,135

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Single

Max Surge Current :

4A

Speed :

Small Signal =< 200mA (Io), Any Speed

Recovery Time :

4 ns

Case Connection :

Isolated

Mounting Type :

Surface Mount

Terminal Form :

WRAP AROUND

Current - Reverse Leakage @ Vr :

5μA @ 75V

Max Reverse Leakage Current :

5μA

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Diode Element Material :

SILICON

Voltage - Forward (Vf) (Max) @ If :

1V @ 100mA

Factory Lead Time :

6 Weeks

Contact Plating :

Tin

Reference Standard :

IEC-60134

Max Operating Temperature :

200°C

Time@Peak Reflow Temperature-Max (s) :

30

Reverse Recovery Time :

4 ns

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Forward Voltage :

1V

Min Operating Temperature :

-65°C

Power Dissipation-Max :

0.5W

Base Part Number :

BAS32

Diode Type :

Standard

Package / Case :

DO-213AC, MINI-MELF, SOD-80

Packaging :

Tape and Reel (TR)

Number of Pins :

2

Mount :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Element Configuration :

Single

Peak Non-Repetitive Surge Current :

4A

Operating Temperature - Junction :

200°C Max

Terminal Position :

END

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Current - Average Rectified (Io) :

200mA DC

Max Reverse Voltage (DC) :

75V

HTS Code :

8541.10.00.70

Max Repetitive Reverse Voltage (Vrrm) :

100V

Forward Current :

200mA

Average Rectified Current :

200mA

Pin Count :

2

Number of Terminations :

2