BAS32L,135

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Single

Contact Plating :

Tin

Voltage - Forward (Vf) (Max) @ If :

1V @ 100mA

Number of Terminations :

2

Terminal Position :

END

Operating Temperature - Junction :

200°C Max

Forward Voltage :

1V

Diode Element Material :

SILICON

Terminal Form :

WRAP AROUND

Package / Case :

DO-213AC, MINI-MELF, SOD-80

Diode Type :

Standard

Recovery Time :

4 ns

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Current - Average Rectified (Io) :

200mA DC

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Peak Reflow Temperature (Cel) :

260

Max Repetitive Reverse Voltage (Vrrm) :

100V

HTS Code :

8541.10.00.70

Max Reverse Voltage (DC) :

75V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Average Rectified Current :

200mA

Radiation Hardening :

No

Number of Elements :

1

JESD-609 Code :

e3

Base Part Number :

BAS32

Reverse Recovery Time :

4 ns

Reference Standard :

IEC-60134

Forward Current :

200mA

Power Dissipation-Max :

0.5W

Peak Non-Repetitive Surge Current :

4A

Mounting Type :

Surface Mount

Max Reverse Leakage Current :

5μA

ECCN Code :

EAR99

Max Surge Current :

4A

Min Operating Temperature :

-65°C

Factory Lead Time :

6 Weeks

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Number of Pins :

2

Current - Reverse Leakage @ Vr :

5μA @ 75V

Speed :

Small Signal =< 200mA (Io), Any Speed

Max Operating Temperature :

200°C