BAS321115
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- Mfr.Part #
- BAS321115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-76, SOD-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BAS321 - RECTIFIER
- Stock
- 9,300
- In Stock ：
- 9,300
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Mounting Type :
- Surface Mount
- Peak Reverse Current :
- 100nA
- Base Part Number :
- BAS321
- Length :
- 1.8mm
- Terminal Position :
- Dual
- Reference Standard :
- IEC-60134
- Contact Plating :
- Tin
- Max Surge Current :
- 9A
- Weight :
- 4.535924g
- Package / Case :
- SC-76, SOD-323
- Radiation Hardening :
- No
- Pin Count :
- 2
- HTS Code :
- 8541.10.00.70
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Max Forward Surge Current (Ifsm) :
- 9A
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Current - Average Rectified (Io) :
- 250mA DC
- Number of Pins :
- 2
- JESD-609 Code :
- e3
- Reverse Recovery Time :
- 50 ns
- Average Rectified Current :
- 250mA
- Max Operating Temperature :
- 150°C
- Max Reverse Voltage (DC) :
- 200V
- Packaging :
- Tape and Reel (TR)
- Voltage - Forward (Vf) (Max) @ If :
- 1.25V @ 200mA
- Published :
- 1999
- Height :
- 1.05mm
- Diode Element Material :
- SILICON
- Operating Temperature - Junction :
- 150°C Max
- Terminal Form :
- Gull wing
- Forward Current :
- 250mA
- Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Current - Reverse Leakage @ Vr :
- 100nA @ 200V
- Width :
- 1.35mm
- Lead Free :
- Lead Free
- Forward Voltage :
- 1.25V
- ECCN Code :
- EAR99
- Current :
- 25A
- Max Repetitive Reverse Voltage (Vrrm) :
- 250V
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Element Configuration :
- Single
- Max Power Dissipation :
- 300mW
- Diode Type :
- Standard
- Capacitance @ Vr, F :
- 2pF @ 0V 1MHz
- Recovery Time :
- 50 ns
- Reverse Voltage :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Peak Non-Repetitive Surge Current :
- 9A
- Voltage :
- 250V
- Datasheets
- BAS321115
Specialized ICs NXP Semiconductors BAS321,115 Overview
The Specialized ICs NXP Semiconductors BAS321,115 is a high-performance, fast recovery diode, optimized for applications demanding low power loss and high efficiency. This device features a reverse voltage of up to 250V and an average rectified current of 250mA, making it ideal for high-density mounting where size and power efficiency are critical. With a maximum forward current of 250mA and power dissipation of 300mW, this diode is designed to handle significant energy efficiently. Additionally, its capability to manage a surge current up to 9A, combined with a low leakage current of just 100nA at 200V, highlights its reliability and robustness in challenging environments. This makes the BAS321,115 an indispensable component in sophisticated electronic assemblies where precise power management is required.
Specialized ICs NXP Semiconductors BAS321,115 Key Features
An average rectified current of 250mA, ensuring adequate throughput for high-efficiency applications.
Minimal power loss manifested as 300mW of heat, optimizing the system's energy efficiency.
A peak reverse current of only 100nA, minimizing leakage and enhancing overall device performance.
Specialized ICs NXP Semiconductors BAS321,115 Applications
The BAS321,115 diode is widely used across a range of industrial and consumer applications. It is particularly effective in:
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
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