BAS21LT1

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

Operating Temperature - Junction :

-55°C~150°C

Published :

2004

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

JESD-609 Code :

e3

Diode Type :

Standard

Mounting Type :

Surface Mount

Current Rating :

200mA

Forward Current :

200mA

Base Part Number :

BAS21L

Reverse Recovery Time :

50 ns

Power Dissipation :

385mW

Max Operating Temperature :

150°C

Breakdown Voltage :

250V

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Max Repetitive Reverse Voltage (Vrrm) :

250V

Number of Pins :

3

Factory Lead Time :

4 Weeks

Max Surge Current :

625mA

Contact Plating :

Tin

Element Configuration :

Dual

Forward Voltage :

1.25V

Width :

1.3mm

Halogen Free :

Halogen Free

Max Forward Surge Current (Ifsm) :

625mA

Output Current :

200mA

Recovery Time :

50 ns

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Min Operating Temperature :

-55°C

Pbfree Code :

yes

HTS Code :

8541.10.00.70

Peak Non-Repetitive Surge Current :

625mA

Pin Count :

3

Diode Element Material :

SILICON

Max Reverse Leakage Current :

100nA

Terminal Form :

Gull wing

Average Rectified Current :

200mA

Max Reverse Voltage (DC) :

250V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current - Average Rectified (Io) :

200mA DC

REACH SVHC :

No SVHC

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Capacitance :

5pF

Mount :

Surface Mount

Number of Elements :

1

Length :

2.9mm

Current - Reverse Leakage @ Vr :

100nA @ 200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Speed :

Small Signal =< 200mA (Io), Any Speed

Radiation Hardening :

No

Peak Reverse Current :

100nA

Height :

940μm

RoHS Status :

ROHS3 Compliant