BAS16WT1G

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

Contact Plating :

Tin

JESD-609 Code :

e3

Breakdown Voltage :

75V

Package / Case :

SC-70, SOT-323

Max Surge Current :

500mA

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Element Configuration :

Single

Published :

2005

Speed :

Small Signal =< 200mA (Io), Any Speed

Min Operating Temperature :

-55°C

Current - Average Rectified (Io) :

200mA DC

Forward Voltage :

1.25V

Pbfree Code :

yes

Output Current :

200mA

Peak Non-Repetitive Surge Current :

500mA

Factory Lead Time :

5 Weeks

Terminal Form :

Gull wing

Capacitance :

2pF

Radiation Hardening :

No

Max Forward Surge Current (Ifsm) :

500mA

REACH SVHC :

No SVHC

Max Repetitive Reverse Voltage (Vrrm) :

75V

Power Dissipation :

200mW

Diode Element Material :

SILICON

Packaging :

Cut Tape (CT)

Number of Pins :

3

Average Rectified Current :

200mA

Mounting Type :

Surface Mount

Number of Elements :

1

Number of Terminations :

3

Terminal Position :

Dual

Termination :

SMD/SMT

Max Reverse Leakage Current :

1μA

Reverse Recovery Time :

6 ns

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Width :

1.3462mm

Base Part Number :

BAS16W

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Operating Temperature - Junction :

-55°C~150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

889μm

Diode Type :

Standard

Peak Reverse Current :

1μA

Recovery Time :

6 ns

Forward Current :

150mA

Length :

2.1844mm

Max Reverse Voltage (DC) :

100V

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Halogen Free :

Halogen Free

Surface Mount :

yes

Max Breakdown Voltage :

75V

Time@Peak Reflow Temperature-Max (s) :

40

HTS Code :

8541.10.00.70

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Reverse Leakage @ Vr :

1μA @ 75V