BAR6704E6327HTSA1

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Mfr.Part #
BAR6704E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF DIODE PIN 150V 250MW SOT23-3
Stock
3,000
In Stock :
3,000

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Manufacturer :
Infineon Technologies
Product Category :
Diodes - RF
Current - Max :
200mA
Number of Terminations :
3
Breakdown Voltage-Min :
150V
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PDSO-G3
Resistance @ If, F :
1Ohm @ 10mA 100MHz
Capacitance @ Vr, F :
0.55pF @ 5V 1MHz
Factory Lead Time :
26 Weeks
HTS Code :
8541.10.00.80
Frequency Band :
L B
Diode Type :
PIN - 1 Pair Series Connection
Diode Forward Resistance-Max :
1.8Ohm
Power Dissipation-Max :
250mW
Operating Temperature :
150°C TJ
Configuration :
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Terminal Form :
Gull wing
Published :
2011
Number of Elements :
2
Package / Case :
TO-236-3, SC-59, SOT-23-3
ECCN Code :
EAR99
Surface Mount :
yes
Reach Compliance Code :
Compliant
Diode Element Material :
SILICON
Voltage - Peak Reverse (Max) :
150V
Terminal Position :
Dual
Minority Carrier Lifetime-Nom :
0.7 µs
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Diode Capacitance-Max :
0.9pF
Application :
ATTENUATOR; SWITCHING
Datasheets
BAR6704E6327HTSA1
Introducing Diodes - RF Infineon Technologies BAR6704E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, BAR6704E6327HTSA1 pinout, BAR6704E6327HTSA1 datasheet PDF, BAR6704E6327HTSA1 amp .Beyond Diodes - RF Infineon Technologies BAR6704E6327HTSA1 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BAR6704E6327HTSA1


PIN - 1 Pair Series Connection 0.55pF @ 5V 1MHz 150°C TJ 3 Terminations SILICON DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3

BAR6704E6327HTSA1 Overview


Operating from 200mA is the maximum current for this device.The maximum peak reverse voltage for this device is 150V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 150V.

BAR6704E6327HTSA1 Features


from a maximum current of 200mA volts
at its lowest breakdown voltage of 150V


BAR6704E6327HTSA1 Applications


There are a lot of Infineon Technologies
BAR6704E6327HTSA1 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
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