BAR 63-02W H6433
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- Mfr.Part #
- BAR 63-02W H6433
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-80
- Datasheet
- Download
- Description
- RF DIODE PIN 50V 250MW SCD80
- Stock
- 36,986
- In Stock ：
- 36,986
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Diodes - RF
- Number of Terminations :
- 2
- Capacitance @ Vr, F :
- 0.3pF @ 5V 1MHz
- Reach Compliance Code :
- Compliant
- Current - Max :
- 100mA
- Diode Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-F2
- Resistance @ If, F :
- 1Ohm @ 10mA 100MHz
- Voltage - Peak Reverse (Max) :
- 50V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Power Dissipation-Max :
- 250mW
- Breakdown Voltage-Min :
- 50V
- Minority Carrier Lifetime-Nom :
- 0.075 μs
- Base Part Number :
- BAR63
- Package / Case :
- SC-80
- Terminal Form :
- Flat
- HTS Code :
- 8541.10.00.80
- Diode Type :
- PIN - Single
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Frequency Band :
- S B
- Diode Forward Resistance-Max :
- 2Ohm
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Application :
- SWITCHING
- Diode Capacitance-Max :
- 0.3pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BAR 63-02W H6433
PIN - Single 0.3pF @ 5V 1MHz 150°C TJ 2 Terminations SILICON DUAL Tape & Reel (TR) SC-80
BAR 63-02W H6433 Overview
A maximum current of 100mA is required to operate this device.This device operates at a maximum peak reverse voltage of 50V according to its specifications.The breakdown voltage of this device may occasionally be as low as 50V.
BAR 63-02W H6433 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V
BAR 63-02W H6433 Applications
There are a lot of Infineon Technologies
BAR 63-02W H6433 applications of RF diodes.
- Telematic systems
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
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