BAP70-04W,115

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Mfr.Part #
BAP70-04W,115
Manufacturer
NXP Semiconductors
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
RF DIODE PIN 50V 260MW SOT323-3
Stock
44,642
In Stock :
44,642

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Surface Mount :
yes
Terminal Position :
Dual
Diode Res Test Current :
0.5mA
Configuration :
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Operating Temperature :
-65°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Current - Max :
100mA
Application :
ATTENUATOR; SWITCHING
Diode Capacitance-Nom :
0.6pF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Breakdown Voltage-Min :
50V
Capacitance @ Vr, F :
0.3pF @ 20V 1MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PDSO-G3
Voltage - Peak Reverse (Max) :
50V
HTS Code :
8541.10.00.70
Diode Element Material :
SILICON
Resistance @ If, F :
1.9Ohm @ 100mA 100MHz
Terminal Form :
Gull wing
Terminal Finish :
Tin (Sn)
Power Dissipation-Max :
260mW
Diode Res Test Frequency :
100MHz
Number of Elements :
2
Diode Capacitance-Max :
0.3pF
Package / Case :
SC-70, SOT-323
Diode Type :
PIN - 1 Pair Series Connection
Qualification Status :
Not Qualified
Number of Terminations :
3
Pin Count :
3
Packaging :
Tape and Reel (TR)
Minority Carrier Lifetime-Nom :
1.25 µs
Factory Lead Time :
13 Weeks
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Datasheets
BAP70-04W,115
Introducing Diodes - RF NXP Semiconductors BAP70-04W,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:SC-70, SOT-323, Number of Terminations:3, BAP70-04W,115 pinout, BAP70-04W,115 datasheet PDF, BAP70-04W,115 amp .Beyond Diodes - RF NXP Semiconductors BAP70-04W,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP70-04W,115


PIN - 1 Pair Series Connection 0.3pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-70, SOT-323

BAP70-04W,115 Overview


From 100mA, this device will operate.This device operates at a maximum reverse voltage of 50V based on the applicable device specifications.Sometimes, this device might run at its lowest breakdown voltage.

BAP70-04W,115 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V


BAP70-04W,115 Applications


There are a lot of NXP USA Inc.
BAP70-04W,115 applications of RF diodes.


  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
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