BAP65-05W,115
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- Mfr.Part #
- BAP65-05W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- RF DIODE PIN 30V 240MW SOT323-3
- Stock
- 34,228
- In Stock ：
- 34,228
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -65°C~150°C TJ
- Breakdown Voltage-Min :
- 30V
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Current - Max :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- HTS Code :
- 8541.10.00.70
- Diode Capacitance-Nom :
- 0.7pF
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Configuration :
- COMMON CATHODE, 2 ELEMENTS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Pin Count :
- 3
- Capacitance @ Vr, F :
- 0.425pF @ 20V 1MHz
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Diode Type :
- PIN - 1 Pair Common Cathode
- JESD-30 Code :
- R-PDSO-G3
- Diode Res Test Frequency :
- 100MHz
- Power Dissipation-Max :
- 240mW
- Voltage - Peak Reverse (Max) :
- 30V
- Application :
- ATTENUATOR; SWITCHING
- Number of Elements :
- 2
- Resistance @ If, F :
- 350mOhm @ 100mA 100MHz
- Base Part Number :
- BAP65-05
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minority Carrier Lifetime-Nom :
- 0.17 µs
- Diode Forward Resistance-Max :
- 0.9Ohm
- Diode Res Test Current :
- 0.5mA
- Surface Mount :
- yes
- Diode Capacitance-Max :
- 0.9pF
- Diode Element Material :
- SILICON
- Datasheets
- BAP65-05W,115
PIN - 1 Pair Common Cathode 0.425pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-70, SOT-323
BAP65-05W,115 Overview
There is no limit to how much current can be applied to this device at 100mA.RF diode operates at a maximum reverse voltage of 30V in accordance wRF diodeh the device specifications.On occasion, this device can run at its lowest breakdown voltage of 30V.
BAP65-05W,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 30V
BAP65-05W,115 Applications
There are a lot of NXP USA Inc.
BAP65-05W,115 applications of RF diodes.
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
- Low-loss, high-power limiters
- Receiver protectors
- UHF mixer
- Sampling circuits
- Modulators
- Phase detection
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