BAP65-05,215
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- Mfr.Part #
- BAP65-05,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF DIODE PIN 30V 250MW TO236AB
- Stock
- 8,098
- In Stock ：
- 8,098
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PDSO-G3
- Base Part Number :
- BAP65-05
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Diode Res Test Current :
- 5mA
- Qualification Status :
- Not Qualified
- Minority Carrier Lifetime-Nom :
- 0.17 µs
- JEDEC-95 Code :
- TO-236AB
- Diode Res Test Frequency :
- 100MHz
- Configuration :
- COMMON CATHODE, 2 ELEMENTS
- RoHS Status :
- ROHS3 Compliant
- Capacitance @ Vr, F :
- 0.425pF @ 20V 1MHz
- Resistance @ If, F :
- 350mOhm @ 100mA 100MHz
- Diode Element Material :
- SILICON
- HTS Code :
- 8541.10.00.70
- Application :
- ATTENUATOR; SWITCHING
- Current - Max :
- 100mA
- Diode Forward Resistance-Max :
- 0.9Ohm
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 13 Weeks
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 250mW
- Pin Count :
- 3
- Diode Capacitance-Max :
- 0.9pF
- Diode Capacitance-Nom :
- 0.7pF
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Number of Elements :
- 2
- Breakdown Voltage-Min :
- 30V
- Diode Type :
- PIN - 1 Pair Common Cathode
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Voltage - Peak Reverse (Max) :
- 30V
- Datasheets
- BAP65-05,215
PIN - 1 Pair Common Cathode 0.425pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
BAP65-05,215 Overview
This device is designed to operate from the maximal current of 100mA.In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 30V.Occasionally, this device may run at its lowest possible breakdown voltage of 30V.
BAP65-05,215 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 30V
BAP65-05,215 Applications
There are a lot of NXP USA Inc.
BAP65-05,215 applications of RF diodes.
- Sensor interfaces of security systems
- Telematic systems
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
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