BAP65-02,115

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Mfr.Part #
BAP65-02,115
Manufacturer
NXP Semiconductors
Package / Case
SC-79, SOD-523
Datasheet
Download
Description
RF DIODE PIN 30V 715MW SOD523
Stock
55
In Stock :
55

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Breakdown Voltage-Min :
30V
Application :
ATTENUATOR; SWITCHING
Diode Type :
PIN - Single
Diode Capacitance-Nom :
0.65pF
Number of Elements :
1
Factory Lead Time :
13 Weeks
Terminal Finish :
Tin (Sn)
Base Part Number :
BAP65
Package / Case :
SC-79, SOD-523
RoHS Status :
ROHS3 Compliant
Capacitance @ Vr, F :
0.375pF @ 20V 1MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~150°C TJ
HTS Code :
8541.10.00.70
Diode Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Diode Res Test Frequency :
100MHz
Diode Res Test Current :
5mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
High Voltage
JESD-30 Code :
R-PDSO-F2
Current - Max :
100mA
JESD-609 Code :
e3
Diode Capacitance-Max :
0.9pF
Resistance @ If, F :
350mOhm @ 100mA 100MHz
Qualification Status :
Not Qualified
Surface Mount :
yes
Number of Terminations :
2
Terminal Position :
Dual
Terminal Form :
Flat
Minority Carrier Lifetime-Nom :
0.17 µs
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
715mW
Diode Forward Resistance-Max :
0.9Ohm
Voltage - Peak Reverse (Max) :
30V
Pin Count :
2
Datasheets
BAP65-02,115
Introducing Diodes - RF NXP Semiconductors BAP65-02,115 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BAP65, Package / Case:SC-79, SOD-523, Operating Temperature:-65°C~150°C TJ, Number of Terminations:2, BAP65-02,115 pinout, BAP65-02,115 datasheet PDF, BAP65-02,115 amp .Beyond Diodes - RF NXP Semiconductors BAP65-02,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP65-02,115


PIN - Single 0.375pF @ 20V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-79, SOD-523

BAP65-02,115 Overview


There is no limit to how much current can be applied to this device at 100mA.RF diode operates at a maximum reverse voltage of 30V in accordance wRF diodeh the device specifications.On occasion, this device can run at its lowest breakdown voltage of 30V.

BAP65-02,115 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 30V


BAP65-02,115 Applications


There are a lot of NXP USA Inc.
BAP65-02,115 applications of RF diodes.


  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators
  • Phase detection
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