BAP64-06,215
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- Mfr.Part #
- BAP64-06,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF DIODE PIN 175V 250MW TO236AB
- Stock
- 7,200
- In Stock ：
- 7,200
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Base Part Number :
- BAP64-06
- Capacitance @ Vr, F :
- 0.35pF @ 20V 1MHz
- JESD-30 Code :
- R-PDSO-G3
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Max :
- 100mA
- Number of Terminations :
- 3
- Diode Type :
- PIN - 1 Pair Common Anode
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Voltage - Peak Reverse (Max) :
- 175V
- Terminal Form :
- Gull wing
- Diode Capacitance-Nom :
- 0.52pF
- Number of Elements :
- 2
- Diode Res Test Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency Band :
- S B
- Diode Element Material :
- SILICON
- Diode Res Test Current :
- 0.5mA
- JEDEC-95 Code :
- TO-236AB
- HTS Code :
- 8541.10.00.70
- Additional Feature :
- High Voltage
- Power Dissipation-Max :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -65°C~150°C TJ
- Breakdown Voltage-Min :
- 175V
- Terminal Position :
- Dual
- Resistance @ If, F :
- 1.35Ohm @ 100mA 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Factory Lead Time :
- 13 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Configuration :
- COMMON ANODE, 2 ELEMENTS
- Minority Carrier Lifetime-Nom :
- 1.55 μs
- Application :
- ATTENUATOR; SWITCHING
- Diode Capacitance-Max :
- 0.35pF
- Datasheets
- BAP64-06,215
PIN - 1 Pair Common Anode 0.35pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
BAP64-06,215 Overview
In this device, the maximum current is 100mA mA.Based on its applicable specifications, this device operates at 175V peak reverse voltage.The device may occasionally operate at the lowest breakdown voltage possible, which is 175V.
BAP64-06,215 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 175V
BAP64-06,215 Applications
There are a lot of NXP USA Inc.
BAP64-06,215 applications of RF diodes.
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
- Low-loss, high-power limiters
- Receiver protectors
- UHF mixer
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