BAP1321-02,115

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - RF

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Frequency Band :

S B

Time@Peak Reflow Temperature-Max (s) :

40

Minority Carrier Lifetime-Nom :

0.5 µs

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F2

HTS Code :

8541.10.00.70

Diode Res Test Current :

0.5mA

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-79, SOD-523

Additional Feature :

High Voltage

Base Part Number :

BAP1321

Terminal Position :

Dual

Voltage - Peak Reverse (Max) :

60V

Diode Capacitance-Nom :

0.4pF

Application :

ATTENUATOR; SWITCHING

Resistance @ If, F :

1.3Ohm @ 100mA 100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diode Type :

PIN - Single

Capacitance @ Vr, F :

0.32pF @ 20V 1MHz

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Number of Elements :

1

Pin Count :

2

Diode Element Material :

SILICON

Breakdown Voltage-Min :

60V

Power Dissipation-Max :

715mW

Current - Max :

100mA

Diode Capacitance-Max :

0.45pF

Published :

2001

Diode Res Test Frequency :

100MHz

Number of Terminations :

2