BA885E6327HTSA1

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Mfr.Part #
BA885E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF DIODE PIN 50V SOT23-3
Stock
3,000
In Stock :
3,000

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Manufacturer :
Infineon Technologies
Product Category :
Diodes - RF
Current - Max :
50mA
Reach Compliance Code :
Compliant
Published :
2005
Pbfree Code :
yes
ECCN Code :
EAR99
Factory Lead Time :
6 Weeks
RoHS Status :
RoHS Compliant
Terminal Finish :
Tin (Sn)
Surface Mount :
yes
HTS Code :
8541.10.00.80
Diode Capacitance-Max :
0.4pF
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Application :
ATTENUATOR; SWITCHING
Resistance @ If, F :
7Ohm @ 10mA 100MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minority Carrier Lifetime-Nom :
1.6 μs
Diode Forward Resistance-Max :
7Ohm
Number of Terminations :
3
Diode Type :
PIN - Single
Capacitance @ Vr, F :
0.6pF @ 10V 1MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Qualification Status :
Not Qualified
Operating Temperature :
150°C TJ
Voltage - Peak Reverse (Max) :
50V
Breakdown Voltage-Min :
50V
Diode Element Material :
SILICON
Package / Case :
TO-236-3, SC-59, SOT-23-3
JESD-609 Code :
e3
Pin Count :
3
Frequency Band :
MEDIUM FREQUENCY TO L B
JESD-30 Code :
R-PDSO-G3
Terminal Position :
Dual
Datasheets
BA885E6327HTSA1
Introducing Diodes - RF Infineon Technologies BA885E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, BA885E6327HTSA1 pinout, BA885E6327HTSA1 datasheet PDF, BA885E6327HTSA1 amp .Beyond Diodes - RF Infineon Technologies BA885E6327HTSA1 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BA885E6327HTSA1


PIN - Single 0.6pF @ 10V 1MHz 150°C TJ 3 Terminations SILICON NOT SPECIFIED DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3

BA885E6327HTSA1 Overview


The device is designed to operate from a maximal current of 50mA volts.A maximum reverse voltage of 50V is specified in the applicable device specifications.The device may occasionally run at its lowest breakdown voltage.

BA885E6327HTSA1 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V


BA885E6327HTSA1 Applications


There are a lot of Infineon Technologies
BA885E6327HTSA1 applications of RF diodes.


  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
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