BA779-HG3-08
- Mfr.Part #
- BA779-HG3-08
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF DIODE PIN 30V SOT23-3
- Stock
- 2,948
- In Stock :
- 2,948
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- Manufacturer :
- Vishay
- Product Category :
- Diodes - RF
- Terminal Form :
- Gull wing
- Weight :
- 8.107964mg
- Application :
- Attenuator
- Factory Lead Time :
- 7 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Surface Mount :
- yes
- Reference Standard :
- AEC-Q101
- Diode Type :
- PIN - Single
- HTS Code :
- 8541.10.00.80
- Max Current Rating :
- 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Diode Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Reverse Voltage :
- 30V
- Published :
- 2016
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Operating Temperature :
- 125°C TJ
- Forward Voltage :
- 1V
- Element Configuration :
- Single
- Diode Capacitance-Max :
- 0.5pF
- Frequency Band :
- HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Minority Carrier Lifetime-Nom :
- 4 µs
- Forward Current :
- 50mA
- Packaging :
- Tape and Reel (TR)
- Capacitance @ Vr, F :
- 0.5pF @ 0V 100MHz
- Resistance @ If, F :
- 50Ohm @ 1.5mA 100MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BA779-HG3-08

PIN - Single 0.5pF @ 0V 100MHz 125°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
BA779-HG3-08 Overview
RF diode is recommended that the system's forward voltage is kept above 1V.
BA779-HG3-08 Features
BA779-HG3-08 Applications
There are a lot of Vishay Semiconductor Diodes Division
BA779-HG3-08 applications of RF diodes.
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
- Low-loss, high-power limiters
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