AT28BV64-30SI

Manufacturer :

Microchip Technology

Product Category :

Memory

ECCN Code :

EAR99

Memory Density :

65536 bit

Standby Current-Max :

0.00005 A

Peak Reflow Temperature (Cel) :

240

Supplier Device Package :

28-SOIC

Reach Compliance Code :

Compliant

Supply Voltage-Min (Vsup) :

2.7 V

Supply Voltage-Max (Vsup) :

3.6 V

Product Status :

Obsolete

Subcategory :

EEPROMs

Mounting Type :

Surface Mount

Programming Voltage :

3 V

HTS Code :

8542.32.00.51

Write Cycle Time-Max (tWC) :

3 ms

Additional Feature :

100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION

Output Characteristics :

3-STATE

Pin Count :

28

Seated Height-Max :

2.65 mm

Base Part Number :

AT28BV64

Number of Words :

8192 words

Temperature Grade :

Industrial

Memory Size :

64Kb 8K x 8

Number of Functions :

1

Endurance :

100000 Write/Erase Cycles

Data Retention Time-Min :

10

Data Polling :

yes

JESD-30 Code :

R-PDSO-G28

Length :

17.9 mm

Technology :

EEPROM

Toggle Bit :

No

Series :

--

Published :

1997

Power Supplies :

3/3.3 V

Memory Interface :

Parallel

Memory Organization :

8K x 8

Number of Terminals :

28

Memory Width :

8

Base Product Number :

AT28BV64

Access Time :

300ns

Width :

7.5 mm

Supply Current-Max :

0.008 mA

Operating Mode :

ASYNCHRONOUS

Memory IC Type :

EEPROM

Ready/Busy :

yes

Qualification Status :

Not Qualified

Packaging :

Tube

Organization :

8KX8

Package :

Tube

Memory Format :

EEPROM

JESD-609 Code :

e0

Manufacturer :

Atmel Corporation

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Form :

Gull wing

Command User Interface :

No

Surface Mount :

yes

Terminal Pitch :

1.27 mm

Package / Case :

28-SOIC (0.295, 7.50mm Width)

Parallel/Serial :

Parallel

Package Shape :

RECTANGULAR

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Write Cycle Time - Word, Page :

3ms

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Memory Type :

Non-Volatile

Voltage - Supply :

2.7V~3.6V

Operating Temperature :

-40°C~85°C TC