APT27HZTR-G1

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Mfr.Part #
APT27HZTR-G1
Manufacturer
Diodes Incorporated
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 450V 0.8A TO92
Stock
3,192
In Stock :
3,192

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 300mA 10V
Collector Emitter Voltage (VCEO) :
500mV
Polarity :
NPN
Voltage - Collector Emitter Breakdown (Max) :
450V
Factory Lead Time :
15 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Power - Max :
800mW
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150°C
Vce Saturation (Max) @ Ib, Ic :
500mV @ 40mA, 200mA
Continuous Collector Current :
800mA
Base Part Number :
APT27
Emitter Base Voltage (VEBO) :
9V
Supplier Device Package :
TO-92
Current - Collector (Ic) (Max) :
800mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Max Power Dissipation :
800mW
Mount :
Through Hole
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
10μA
Min Operating Temperature :
-55°C
Collector Emitter Breakdown Voltage :
450V
Max Collector Current :
800mA
Published :
2014
Max Breakdown Voltage :
450V
Weight :
453.59237mg
Element Configuration :
Single
Collector Emitter Saturation Voltage :
500mV
Packaging :
Tape and Box (TB)
Datasheets
APT27HZTR-G1
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated APT27HZTR-G1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:APT27, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, APT27HZTR-G1 pinout, APT27HZTR-G1 datasheet PDF, APT27HZTR-G1 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated APT27HZTR-G1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated APT27HZTR-G1


NPN -55°C~150°C TJ 10μA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

APT27HZTR-G1 Overview


This device has a DC current gain of 6 @ 300mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 800mA is necessary for high efficiency.The base voltage of the emitter can be kept at 9V to achieve high efficiency.As a result, it can handle voltages as low as 450V volts.Single BJT transistor comes in a supplier device package of TO-92.Detection of Collector Emitter Breakdown at 450V maximal voltage is present.The maximum collector current is 800mA volts.

APT27HZTR-G1 Features


the DC current gain for this device is 6 @ 300mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 40mA, 200mA
the emitter base voltage is kept at 9V
the supplier device package of TO-92


APT27HZTR-G1 Applications


There are a lot of Diodes Incorporated
APT27HZTR-G1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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