A2T07D160W04SR3
- Mfr.Part #
- A2T07D160W04SR3
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-780S-4
- Datasheet
- Download
- Description
- FET RF 2CH 70V 803MHZ
- Stock
- 44,777
- In Stock :
- 44,777
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- NI-780S-4
- Current - Test :
- 450mA
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Test :
- 28V
- Voltage - Rated :
- 70V
- RoHS Status :
- ROHS3 Compliant
- Power - Output :
- 30W
- HTS Code :
- 8541.29.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Transistor Type :
- LDMOS (Dual)
- Published :
- 2006
- Gain :
- 21.5dB
- Frequency :
- 803MHz
- Datasheets
- A2T07D160W04SR3

A2T07D160W04SR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
A2T07D160W04SR3 Description
For cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz, this 30 W symmetrical Doherty RF power LDMOS transistor is created. This product can be applied in a variety of circumstances and is meant for general use.
A2T07D160W04SR3 Features
-
Wide Instantaneous Bandwidth Applications Designed
-
Improved Class C Operation with a Wider Negative Gate—Source Voltage Range
-
Capable of Withstanding Broadband Operating Conditions and Extremely High Output VSWR
-
For use with Digital Predistortion Error Correction Systems
-
in reel-to-reel. 250 Units, 32 mm Tape Width, 13-inch Reel; R3 Suffix.
A2T07D160W04SR3 Applications
Switching applications
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