A2I25H060NR1

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Mfr.Part #
A2I25H060NR1
Manufacturer
NXP Semiconductors
Package / Case
TO-270-17 Variant, Flat Leads
Datasheet
Download
Description
IC RF LDMOS AMP
Stock
183
In Stock :
183

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Voltage - Rated :
65V
Voltage - Test :
28V
Published :
2009
Gain :
26.1dB
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Pbfree Code :
yes
Current - Test :
26mA
Power - Output :
10.5W
Factory Lead Time :
10 Weeks
Frequency :
2.59GHz
Package / Case :
TO-270-17 Variant, Flat Leads
Packaging :
Tape and Reel (TR)
Transistor Type :
LDMOS (Dual)
RoHS Status :
ROHS3 Compliant
Datasheets
A2I25H060NR1
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors A2I25H060NR1 from Chip IC,where excellence meets affordability. This product stands out with its Gain:26.1dB, Package / Case:TO-270-17 Variant, Flat Leads, A2I25H060NR1 pinout, A2I25H060NR1 datasheet PDF, A2I25H060NR1 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors A2I25H060NR1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors A2I25H060NR1


A2I25H060NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

A2I25H060NR1 Description


The A2I25H060NR1 wideband integrated circuit is an asymmetrical Doherty designed with chip-mapping technology that makes it usable from 2.3 MHz to 2690 MHz. This multi-stage structure supports all common cellular base station modulation formats and is rated for 20 to 32 V operation.



A2I25H060NR1 Features


  • Doherty Advanced High Performance In-Package

  • On-Chip Matching (DC Blocked, 50 Ohm Input)

  • Enable/Disable Function (2) and Integrated Quiescent Current Temperature Compensation

  • Incorporated into Digital Predistortion Error Correction Systems



A2I25H060NR1 Applications


Switching applications


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