A2I25H060GNR1

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Mfr.Part #
A2I25H060GNR1
Manufacturer
NXP Semiconductors
Package / Case
TO-270-17 Variant, Gull Wing
Datasheet
Download
Description
IC TRANS RF LDMOS
Stock
682
In Stock :
682

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Transistor Type :
LDMOS (Dual)
Gain :
26.1dB
Voltage - Rated :
65V
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Frequency :
2.59GHz
Current - Test :
26mA
Factory Lead Time :
10 Weeks
Power - Output :
10.5W
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Published :
2009
Voltage - Test :
28V
Package / Case :
TO-270-17 Variant, Gull Wing
Datasheets
A2I25H060GNR1
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors A2I25H060GNR1 from Chip IC,where excellence meets affordability. This product stands out with its Gain:26.1dB, Package / Case:TO-270-17 Variant, Gull Wing, A2I25H060GNR1 pinout, A2I25H060GNR1 datasheet PDF, A2I25H060GNR1 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors A2I25H060GNR1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors A2I25H060GNR1


A2I25H060GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

A2I25H060GNR1 Description


Asymmetrical Doherty developed with chip-mapping technology, the A2I25H060GNR1 wideband integrated circuit can operate between 2.3 MHz and 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and supports all popular cellular base station modulation formats.



A2I25H060GNR1 Features


  • Doherty High Performance Advanced In-Package

  • Matching on-Chip (DC Blocked, 50 Ohm Input)

  • Integrated Quiescent Current Temperature Compensation and the Enable/Disable Function (2)

  • Digital Predistortion Error Correction Systems incorporate this technology



A2I25H060GNR1 Applications


Switching applications


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