71V25761YS200PFG

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Mfr.Part #
71V25761YS200PFG
Manufacturer
Renesas Electronics Corporation
Package / Case
LQFP
Datasheet
Download
Description
IC SRAM 4.5MBIT PARALLEL 100TQFP
Stock
163
In Stock :
163

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Memory
Supply Current-Max :
0.36mA
Length :
20mm
Memory Density :
4718592 bit
Memory Type :
RAM, SRAM
Additional Feature :
PIPELINED ARCHITECTURE
Qualification Status :
Not Qualified
Pin Count :
100
Supply Voltage-Max (Vsup) :
3.465V
Standby Current-Max :
0.03A
Terminal Finish :
Matte Tin (Sn) - annealed
Operating Mode :
SYNCHRONOUS
Min Operating Temperature :
0°C
Supply Voltage :
3.3V
JESD-609 Code :
e3
RoHS Status :
RoHS Compliant
Max Operating Temperature :
70°C
Temperature Grade :
COMMERCIAL
Surface Mount :
yes
Interface :
Parallel
Package / Case :
LQFP
I/O Type :
COMMON
Power Supplies :
2.53.3V
Supply Voltage-Min (Vsup) :
3.135V
Terminal Form :
Gull wing
Organization :
128KX36
Width :
14mm
Memory Width :
36
Published :
2009
JESD-30 Code :
R-PQFP-G100
Frequency :
200MHz
ECCN Code :
3A991
Access Time (Max) :
3.1 ns
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Standby Voltage-Min :
3.14V
Terminal Position :
QUAD
Height Seated (Max) :
1.6mm
HTS Code :
8542.32.00.41
Output Characteristics :
3-STATE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
100
Terminal Pitch :
0.65mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Functions :
1
Datasheets
71V25761YS200PFG
Introducing Memory Renesas Electronics Corporation 71V25761YS200PFG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:LQFP, Number of Terminations:100, 71V25761YS200PFG pinout, 71V25761YS200PFG datasheet PDF, 71V25761YS200PFG amp .Beyond Memory Renesas Electronics Corporation 71V25761YS200PFG ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation 71V25761YS200PFG


[Memory Renesas Electronics Corporation 71V25761YS200PFG] Overview

Introducing the cutting-edge Memory solution by Renesas Electronics Corporation, the 71V25761YS200PFG. This Integrated Circuit (IC) redefines high-speed data storage with its unparalleled performance and reliability. Designed for demanding applications where speed and efficiency are paramount, this IC SRAM boasts an impressive capacity of 4.5MBIT, housed in a robust 100TQFP package.

Whether you're optimizing data processing in industrial automation, enhancing network infrastructure, or elevating the performance of telecommunications systems, the Memory Renesas Electronics Corporation 71V25761YS200PFG sets the standard for excellence.

[71V25761YS200PFG] Features

  • High-speed data storage: Delivers lightning-fast data access and retrieval for time-sensitive applications.
  • Large capacity: With a generous 4.5MBIT storage capacity, it accommodates extensive data requirements.
  • Robust packaging: Housed in a durable 100TQFP package, ensuring reliability even in challenging environments.
  • Parallel interface: Facilitates seamless integration with existing systems for streamlined operation.
  • Low power consumption: Optimized power efficiency for reduced energy costs and environmental impact.
  • Extended lifespan: Built to withstand rigorous usage demands, providing long-term performance and durability.

[71V25761YS200PFG] Applications

  • Industrial Automation: Powering data-intensive processes in manufacturing plants, robotics, and control systems, ensuring swift and precise operations.
  • Network Infrastructure: Enhancing the speed and reliability of data transmission in routers, switches, and servers, supporting seamless connectivity in large-scale networks.
  • Telecommunications Systems: Enabling high-speed data buffering and caching in telecommunications equipment, optimizing bandwidth utilization and network performance.
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Shipping Cost

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