71V25761YS200PFG

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Mfr.Part #
71V25761YS200PFG
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
LQFP
Datasheet
Download
Description
IC SRAM 4.5MBIT PARALLEL 100TQFP
Stock
163
In Stock :
163

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Memory
Temperature Grade :
COMMERCIAL
HTS Code :
8542.32.00.41
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Standby Voltage-Min :
3.14V
Interface :
Parallel
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Organization :
128KX36
Number of Terminations :
100
Number of Functions :
1
Published :
2009
Output Characteristics :
3-STATE
I/O Type :
COMMON
Supply Voltage-Max (Vsup) :
3.465V
Package / Case :
LQFP
ECCN Code :
3A991
Pin Count :
100
Memory Density :
4718592 bit
Max Operating Temperature :
70°C
Terminal Form :
Gull wing
Additional Feature :
PIPELINED ARCHITECTURE
Length :
20mm
Frequency :
200MHz
Terminal Position :
QUAD
Access Time (Max) :
3.1 ns
Operating Mode :
SYNCHRONOUS
Power Supplies :
2.53.3V
Terminal Finish :
Matte Tin (Sn) - annealed
Memory Type :
RAM, SRAM
Memory Width :
36
Terminal Pitch :
0.65mm
Width :
14mm
JESD-609 Code :
e3
Min Operating Temperature :
0°C
Height Seated (Max) :
1.6mm
Supply Voltage :
3.3V
Supply Current-Max :
0.36mA
Standby Current-Max :
0.03A
JESD-30 Code :
R-PQFP-G100
Surface Mount :
yes
Supply Voltage-Min (Vsup) :
3.135V
Datasheets
71V25761YS200PFG
Introducing Memory Intersil (Renesas Electronics Corporation) 71V25761YS200PFG from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:100, Package / Case:LQFP, 71V25761YS200PFG pinout, 71V25761YS200PFG datasheet PDF, 71V25761YS200PFG amp .Beyond Memory Intersil (Renesas Electronics Corporation) 71V25761YS200PFG ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) 71V25761YS200PFG


Memory Intersil 71V25761YS200PFG Overview

The Memory Intersil 71V25761YS200PFG SRAM chip represents a pivotal advancement in high-speed, high-capacity storage solutions. Manufactured by Intersil, now part of Renesas Electronics Corporation, this IC integrates 4.5Mbit of storage capacity within a compact 100TQFP package. Engineered for robust performance and reliability, the 71V25761YS200PFG is optimized for applications requiring rapid access to large volumes of data. Its parallel interface ensures efficient communication and high throughput, making it ideal for a broad range of industrial and commercial applications. With its high-speed operation and storage capacity, it is an essential component for systems requiring fast and reliable memory solutions.

71V25761YS200PFG Features

This IC SRAM offers a suite of features that enhance its utility in complex digital systems. Key features include a large 4.5Mbit capacity and a fast parallel interface that facilitates quick data access and transfer speeds, all encapsulated in a streamlined 100TQFP package. Its design is geared towards minimizing latency and maximizing efficiency, suitable for high-performance computing environments.

71V25761YS200PFG Applications

  • Advanced Computing Systems: Utilized in server farms and data centers where high speed, large capacity memory is crucial for managing vast data volumes efficiently.
  • Telecommunication Infrastructure: Essential for telecom equipment, enhancing the performance and reliability of systems in real-time communication networks.
  • Automotive Electronics: Supports advanced driver-assistance systems (ADAS) by providing fast data retrieval speeds necessary for real-time decision making.
  • Industrial Automation: Plays a vital role in automated control systems, where quick access to data ensures smooth and efficient process management.
  • Aerospace and Defense: Used in applications requiring rugged, high-capacity memory for navigation and control systems in challenging environments.
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