71V124SA15YG

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Mfr.Part #
71V124SA15YG
Manufacturer
Renesas Electronics Corporation
Package / Case
Datasheet
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Description
IC SRAM 1MBIT PARALLEL 32SOJ
Stock
311
In Stock :
311

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Memory
Published :
2013
Number of Functions :
1
Memory Type :
RAM, SDR, SRAM - Asynchronous
Memory Size :
128kB
Number of Ports :
1
Max Operating Temperature :
70°C
Pin Count :
32
Thickness :
2.2mm
Radiation Hardening :
No
Density :
1 Mb
Length :
20.9mm
Temperature Grade :
COMMERCIAL
Peak Reflow Temperature (Cel) :
260
Operating Supply Voltage :
3.3V
Terminal Position :
Dual
Factory Lead Time :
7 Weeks
I/O Type :
COMMON
Terminal Form :
J BEND
JESD-609 Code :
e3
Mount :
Surface Mount
Nominal Supply Current :
100mA
Min Operating Temperature :
0°C
Width :
10.2mm
Supply Voltage :
3.3V
Number of Pins :
32
Standby Voltage-Min :
3V
Address Bus Width :
17b
Min Supply Voltage :
3V
Max Supply Voltage :
3.6V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Terminal Finish :
Matte Tin (Sn) - annealed
Number of Terminations :
32
Height Seated (Max) :
3.683mm
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Access Time :
15 ns
Pbfree Code :
yes
Word Size :
8B
Sync/Async :
ASYNCHRONOUS
Output Characteristics :
3-STATE
Interface :
Parallel
Datasheets
71V124SA15YG
Introducing Memory Renesas Electronics Corporation 71V124SA15YG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:32, Number of Terminations:32, 71V124SA15YG pinout, 71V124SA15YG datasheet PDF, 71V124SA15YG amp .Beyond Memory Renesas Electronics Corporation 71V124SA15YG ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation 71V124SA15YG


[Memory Renesas Electronics Corporation 71V124SA15YG] Overview

Introducing the cutting-edge [Memory Renesas Electronics Corporation 71V124SA15YG], a high-performance integrated circuit meticulously crafted to meet the demands of modern computing and data storage applications. Renowned for its unparalleled reliability and efficiency, this IC SRAM 1MBIT Parallel 32SOJ is a testament to Renesas Electronics Corporation's commitment to excellence in semiconductor engineering.

Designed with precision and innovation, this SRAM module boasts a formidable capacity of 1MBIT, ensuring ample storage space for critical data in diverse operational environments. Its parallel architecture facilitates swift data transmission, enhancing overall system throughput and responsiveness. Encased in a robust 32SOJ package, this IC delivers exceptional durability and longevity, making it a preferred choice for mission-critical systems.

Whether deployed in industrial automation, telecommunications infrastructure, or embedded computing systems, the [Memory Renesas Electronics Corporation 71V124SA15YG] stands as a beacon of reliability and performance, empowering businesses with the tools they need to thrive in the digital age.

[71V124SA15YG] Features

  • 1MBIT capacity for extensive data storage
  • Parallel architecture for high-speed data transmission
  • Robust 32SOJ package for durability and longevity
  • Exceptional reliability in demanding operational environments
  • Optimized for industrial automation, telecommunications, and embedded computing

[71V124SA15YG] Applications

  • Industrial Automation: Integrates seamlessly into PLCs (Programmable Logic Controllers) and industrial control systems, enabling real-time data processing and monitoring for enhanced productivity and efficiency.
  • Telecommunications Infrastructure: Empowers networking equipment such as routers, switches, and base stations with reliable data storage capabilities, ensuring seamless communication and connectivity.
  • Embedded Computing Systems: Serves as a vital component in embedded devices such as automotive electronics, medical instruments, and consumer electronics, facilitating fast and efficient data access for optimized performance.
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Shipping Cost

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