70V659S12DR
- Mfr.Part #
- 70V659S12DR
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- PQFP
- Datasheet
- Download
- Description
- IC SRAM 4.5MBIT PARALLEL 208PQFP
- Stock
- 31,548
- In Stock :
- 31,548
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Memory
- Operating Temperature :
- 0°C ~ 70°C (TA)
- Thickness :
- 3.5mm
- Pbfree Code :
- No
- Interface :
- Parallel
- I/O Type :
- COMMON
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Height Seated (Max) :
- 4.1mm
- Number of Functions :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Pitch :
- 0.5mm
- Access Time :
- 12 ns
- Nominal Supply Current :
- 465mA
- Max Operating Temperature :
- 70°C
- Lead Free :
- Contains Lead
- Density :
- 4.5 Mb
- Published :
- 2009
- Number of Pins :
- 208
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Number of Terminations :
- 208
- Standby Current-Max :
- 0.015A
- Mount :
- Surface Mount
- Min Operating Temperature :
- 0°C
- Base Part Number :
- IDT70V659
- JESD-609 Code :
- e0
- Sync/Async :
- ASYNCHRONOUS
- Temperature Grade :
- COMMERCIAL
- Word Size :
- 36b
- Number of Ports :
- 2
- Output Characteristics :
- 3-STATE
- Address Bus Width :
- 34b
- Min Supply Voltage :
- 3.15V
- Operating Supply Voltage :
- 3.3V
- Memory Size :
- 512kB
- Peak Reflow Temperature (Cel) :
- 225
- Width :
- 28mm
- Package / Case :
- PQFP
- Length :
- 28mm
- Voltage - Supply :
- 3.15 V ~ 3.45 V
- Memory Format :
- SRAM
- Mounting Type :
- Surface Mount
- Memory Type :
- RAM, SDR, SRAM
- Write Cycle Time - Word, Page :
- 12ns
- Supply Voltage :
- 3.3V
- Radiation Hardening :
- No
- Max Supply Voltage :
- 3.45V
- Max Supply Current :
- 465mA
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Factory Lead Time :
- 7 Weeks
- Pin Count :
- 208
- Terminal Position :
- QUAD
- Supplier Device Package :
- 208-PQFP (28x28)
- Packaging :
- Tray
- Memory Interface :
- Parallel
- Series :
- --
- Datasheets
- 70V659S12DR

Memory Intersil (Renesas Electronics Corporation) 70V659S12DR Overview
Unlock the potential of high-speed and high-capacity data storage with the Memory Intersil (Renesas Electronics Corporation) 70V659S12DR SRAM chip. This robust IC features a significant 4.5Mbit storage capacity and is packed into a compact 208PQFP package, offering a solution optimized for performance and reliability in complex applications. The integration of this advanced technology supports critical real-time processing and storage demands, making it an ideal component for manufacturers looking to enhance their products with reliable memory management capabilities. Its parallel interface ensures quick data access and seamless integration into existing architectures, highlighting its versatility and superior design.
70V659S12DR Features
The 70V659S12DR SRAM chip by Intersil (Renesas Electronics Corporation) delivers exceptional features that include 4.5MBIT of parallel SRAM, housed in a practical 208PQFP package. This component ensures rapid access speeds and is designed for low-power operation, facilitating extended operational efficiency and stability. Its parallel interface not only accelerates the throughput but also simplifies the system design, allowing for easier integration into various industrial applications.
70V659S12DR Applications
- Advanced Networking Equipment: Utilized in routers and switches to manage routing tables more efficiently, enhancing network performance and reliability.
- High-performance Computing: Employs in servers and supercomputers for fast data buffering and cache solutions, supporting intensive computational tasks and data analysis.
- Automotive Electronics: Integrated into automotive systems for managing real-time vehicle telemetry and infotainment systems, improving responsiveness and user experience.
- Industrial Automation: Applied in PLCs and industrial PCs to handle complex processes and control tasks, increasing the reliability and efficiency of automated systems.
- Telecommunications: Used in telecommunications infrastructure to enhance data processing capabilities, supporting high-speed data transmission and signal processing.
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