70V657S12DRI

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Mfr.Part #
70V657S12DRI
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
PQFP
Datasheet
Download
Description
IC SRAM 1.125MBIT PAR 208PQFP
Stock
44,412
In Stock :
44,412

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Memory
Access Time :
12 ns
Min Operating Temperature :
-40°C
Address Bus Width :
30b
Width :
28mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Number of Terminations :
208
Lead Free :
Contains Lead
Interface :
Parallel
Length :
28mm
Terminal Position :
QUAD
Standby Current-Max :
0.015A
Temperature Grade :
Industrial
Max Supply Voltage :
3.45V
Nominal Supply Current :
515mA
Pin Count :
208
Published :
2009
JESD-609 Code :
e0
Sync/Async :
ASYNCHRONOUS
Terminal Finish :
Tin/Lead (Sn/Pb)
Word Size :
36b
Number of Functions :
1
Terminal Form :
Gull wing
Output Characteristics :
3-STATE
Density :
1.1 Mb
RoHS Status :
RoHS Compliant
Radiation Hardening :
No
Operating Supply Voltage :
3.3V
Thickness :
3.5mm
Number of Pins :
208
Peak Reflow Temperature (Cel) :
225
Memory Size :
128kB
Package / Case :
PQFP
Memory Type :
RAM, SDR, SRAM
Number of Ports :
2
Max Operating Temperature :
85°C
Packaging :
Bulk
Mount :
Surface Mount
Height Seated (Max) :
4.1mm
Supply Voltage :
3.3V
Factory Lead Time :
7 Weeks
Min Supply Voltage :
3.15V
Pbfree Code :
No
Time@Peak Reflow Temperature-Max (s) :
20
I/O Type :
COMMON
Terminal Pitch :
0.5mm
Datasheets
70V657S12DRI
Introducing Memory Intersil (Renesas Electronics Corporation) 70V657S12DRI from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:208, Number of Pins:208, Package / Case:PQFP, 70V657S12DRI pinout, 70V657S12DRI datasheet PDF, 70V657S12DRI amp .Beyond Memory Intersil (Renesas Electronics Corporation) 70V657S12DRI ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) 70V657S12DRI


Memory Intersil (Renesas Electronics Corporation) 70V657S12DRI Overview

The Memory Intersil (Renesas Electronics Corporation) 70V657S12DRI is a high-performance IC SRAM designed to meet the demanding requirements of advanced digital systems. This 1.125Mbit SRAM offers rapid access times and a large storage capacity, encapsulated in a compact 208-PQFP package. Its robust design and high reliability make it an ideal choice for applications requiring fast and efficient data storage and retrieval. The integration of cutting-edge technology ensures this memory component delivers consistent performance, enhancing system reliability and efficiency, crucial for B2B clients looking to purchase in bulk.

70V657S12DRI Features

The 70V657S12DRI IC SRAM features include a parallel interface for swift data transfer, a substantial data storage capacity of 1.125 Mbits, and a stable operation under extended industrial temperature ranges. Its 208-PQFP packaging is optimized for space-saving on circuit boards, making it suitable for densely packed electronic assemblies. Furthermore, the device's low-power consumption supports enhanced system endurance and reliability in high-demand applications.

70V657S12DRI Applications

  • Telecommunications Equipment: Utilized in routers and switches for fast data buffering and high-speed packet processing, ensuring efficient data flow and system reliability.
  • Industrial Automation Systems: Serves as a critical component in PLCs and control modules, facilitating rapid data access to enhance process control and operational efficiency.
  • Automotive Electronics: Used in automotive infotainment and advanced driver-assistance systems (ADAS), providing quick access to sensor data, thereby improving response times and safety features.
  • Medical Devices: Integral in medical imaging systems, such as ultrasound and MRI machines, for fast image processing and real-time diagnostic capabilities.
  • Networking Hardware: Essential for network routers and firewall systems, where quick memory access is required to manage large volumes of data and maintain system integrity under high-load conditions.
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