70T659S10DR

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Memory

Radiation Hardening :

No

Nominal Supply Current :

405mA

Thickness :

3.5mm

Peak Reflow Temperature (Cel) :

225

Published :

2009

Number of Terminations :

208

Address Bus Width :

34b

Operating Supply Voltage :

2.5V

Terminal Pitch :

0.5mm

Min Operating Temperature :

0°C

Number of Pins :

208

Min Supply Voltage :

2.4V

Number of Functions :

1

Width :

28mm

Memory Type :

RAM, SRAM

Standby Current-Max :

0.01A

Lead Free :

Contains Lead

Length :

28mm

Max Supply Voltage :

2.6V

RoHS Status :

RoHS Compliant

Access Time :

10 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pin Count :

208

I/O Type :

COMMON

Height Seated (Max) :

4.1mm

Factory Lead Time :

7 Weeks

Time@Peak Reflow Temperature-Max (s) :

20

Pbfree Code :

No

Sync/Async :

ASYNCHRONOUS

Density :

4.5 Mb

Max Operating Temperature :

70°C

Temperature Grade :

COMMERCIAL

Terminal Form :

Gull wing

Output Characteristics :

3-STATE

Package / Case :

PQFP

Mount :

Surface Mount

Terminal Finish :

Tin/Lead (Sn/Pb)

Word Size :

36b

Number of Ports :

2

Supply Voltage :

2.5V

JESD-609 Code :

e0

Terminal Position :

QUAD

Interface :

Parallel