70T651S12DR

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Memory

JESD-609 Code :

e0

Memory Size :

1.1MB

Min Operating Temperature :

0°C

Terminal Pitch :

0.5mm

Width :

28mm

Operating Supply Voltage :

2.5V

Lead Free :

Contains Lead

Address Bus Width :

18b

Supply Voltage :

2.5V

Memory Type :

RAM, SDR, SRAM

Factory Lead Time :

7 Weeks

Interface :

Parallel

Sync/Async :

ASYNCHRONOUS

Height Seated (Max) :

4.1mm

Number of Terminations :

208

Terminal Form :

Gull wing

Access Time :

12 ns

Number of Ports :

2

Pin Count :

208

Min Supply Voltage :

2.4V

Output Characteristics :

3-STATE

Word Size :

36b

Time@Peak Reflow Temperature-Max (s) :

20

Packaging :

Bulk

I/O Type :

COMMON

Length :

28mm

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

PQFP

Number of Pins :

208

Nominal Supply Current :

355mA

Density :

9 Mb

Mount :

Surface Mount

Thickness :

3.5mm

Radiation Hardening :

No

Max Operating Temperature :

70°C

Pbfree Code :

No

Standby Current-Max :

0.01A

Temperature Grade :

COMMERCIAL

Published :

2005

Peak Reflow Temperature (Cel) :

225

Terminal Position :

QUAD

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

RoHS Compliant

Max Supply Voltage :

2.6V