2SC6097-E
- Mfr.Part #
- 2SC6097-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TP
- Stock
- 36,434
- In Stock :
- 36,434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 135mV @ 100mA, 1A
- Max Collector Current :
- 3A
- Frequency - Transition :
- 390MHz
- Max Power Dissipation :
- 800mW
- Number of Terminations :
- 3
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Power Dissipation :
- 800mW
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 6.5V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- JESD-609 Code :
- e6
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Configuration :
- Single
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Published :
- 2012
- hFE Min :
- 300
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 390MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Datasheets
- 2SC6097-E

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC6097-E Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 135mV @ 100mA, 1A.Keeping the emitter base voltage at 6.5V allows for a high level of efficiency.390MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2SC6097-E Features
the DC current gain for this device is 300 @ 100mA 2V
the vce saturation(Max) is 135mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 390MHz
2SC6097-E Applications
There are a lot of ON Semiconductor
2SC6097-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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