2SC6097-E

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Mfr.Part #
2SC6097-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 60V 3A TP
Stock
36,434
In Stock :
36,434

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
60V
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
135mV @ 100mA, 1A
Max Collector Current :
3A
Frequency - Transition :
390MHz
Max Power Dissipation :
800mW
Number of Terminations :
3
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 100mA 2V
Power Dissipation :
800mW
Surface Mount :
No
Emitter Base Voltage (VEBO) :
6.5V
Transistor Type :
NPN
Mounting Type :
Through Hole
Terminal Position :
Single
JESD-609 Code :
e6
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Collector Emitter Voltage (VCEO) :
60V
Polarity/Channel Type :
NPN
Collector Base Voltage (VCBO) :
100V
Configuration :
Single
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
2 Weeks
Number of Pins :
3
Published :
2012
hFE Min :
300
Case Connection :
COLLECTOR
Transition Frequency :
390MHz
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
1μA ICBO
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Number of Elements :
1
ECCN Code :
EAR99
Datasheets
2SC6097-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC6097-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, 2SC6097-E pinout, 2SC6097-E datasheet PDF, 2SC6097-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC6097-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC6097-E


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SC6097-E Overview


In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 135mV @ 100mA, 1A.Keeping the emitter base voltage at 6.5V allows for a high level of efficiency.390MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

2SC6097-E Features


the DC current gain for this device is 300 @ 100mA 2V
the vce saturation(Max) is 135mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 390MHz


2SC6097-E Applications


There are a lot of ON Semiconductor
2SC6097-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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