2SC6097-E
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- Mfr.Part #
- 2SC6097-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TP
- Stock
- 36,434
- In Stock ：
- 36,434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 6.5V
- hFE Min :
- 300
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Surface Mount :
- No
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Collector Base Voltage (VCBO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 135mV @ 100mA, 1A
- JESD-609 Code :
- e6
- Pbfree Code :
- yes
- Pin Count :
- 3
- Max Collector Current :
- 3A
- Frequency - Transition :
- 390MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transition Frequency :
- 390MHz
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 800mW
- Datasheets
- 2SC6097-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC6097-E Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 135mV @ 100mA, 1A.Keeping the emitter base voltage at 6.5V allows for a high level of efficiency.390MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2SC6097-E Features
the DC current gain for this device is 300 @ 100mA 2V
the vce saturation(Max) is 135mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 390MHz
2SC6097-E Applications
There are a lot of ON Semiconductor
2SC6097-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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