2SC6096-TD-H
- Mfr.Part #
- 2SC6096-TD-H
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A PCP
- Stock
- 3,708
- In Stock :
- 3,708
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.3W
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 300MHz
- Current - Collector (Ic) (Max) :
- 2A
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 100V
- JESD-609 Code :
- e6
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 100mA, 1A
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Package / Case :
- TO-243AA
- Transition Frequency :
- 300MHz
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Saturation Voltage :
- 100mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 120V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 150mV
- Emitter Base Voltage (VEBO) :
- 6.5V
- hFE Min :
- 300
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Datasheets
- 2SC6096-TD-H
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NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC6096-TD-H Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.A VCE saturation (Max) of 150mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6.5V.As you can see, the part has a transition frequency of 300MHz.A maximum collector current of 2A volts is possible.
2SC6096-TD-H Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 150mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 300MHz
2SC6096-TD-H Applications
There are a lot of ON Semiconductor
2SC6096-TD-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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