2SC6043-AE

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Mfr.Part #
2SC6043-AE
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
2SC6043 - 50 V, 2 A, LOW VCE NPN
Stock
12,435
In Stock :
12,435

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2005
Max Collector Current :
2A
Collector Emitter Voltage (VCEO) :
50V
Max Breakdown Voltage :
50V
Length :
6mm
Height :
8.5mm
Number of Pins :
3
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
50V
Current - Collector Cutoff (Max) :
1μA ICBO
Gain Bandwidth Product :
420MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 50mA, 1A
Collector Emitter Saturation Voltage :
150mV
Transistor Type :
NPN
Packaging :
Tape and Box (TB)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Lead Free :
Lead Free
hFE Min :
200
Mounting Type :
Through Hole
Terminal Finish :
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Max Power Dissipation :
1W
Pin Count :
3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
JESD-609 Code :
e2
Emitter Base Voltage (VEBO) :
6V
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
80V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Frequency :
1MHz
Factory Lead Time :
4 Weeks
Mount :
Through Hole
ECCN Code :
EAR99
Width :
4.7mm
Datasheets
2SC6043-AE
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC6043-AE from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), 2SC6043-AE pinout, 2SC6043-AE datasheet PDF, 2SC6043-AE amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC6043-AE ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC6043-AE


NPN 150°C TJ 1μA ICBO NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2SC6043-AE Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

2SC6043-AE Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V


2SC6043-AE Applications


There are a lot of ON Semiconductor
2SC6043-AE applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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