2SC6043-AE

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Mfr.Part #
2SC6043-AE
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
2SC6043 - 50 V, 2 A, LOW VCE NPN
Stock
12,435
In Stock :
12,435

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
6mm
ECCN Code :
EAR99
Max Collector Current :
2A
JESD-609 Code :
e2
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Emitter Saturation Voltage :
150mV
Gain Bandwidth Product :
420MHz
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
300mV @ 50mA, 1A
Lead Free :
Lead Free
Pin Count :
3
Collector Emitter Breakdown Voltage :
50V
Mounting Type :
Through Hole
Max Breakdown Voltage :
50V
Polarity/Channel Type :
NPN
Element Configuration :
Single
Terminal Finish :
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
RoHS Status :
RoHS Compliant
Width :
4.7mm
Factory Lead Time :
4 Weeks
Max Power Dissipation :
1W
Collector Emitter Voltage (VCEO) :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Height :
8.5mm
Max Frequency :
1MHz
Mount :
Through Hole
Packaging :
Tape and Box (TB)
Collector Base Voltage (VCBO) :
80V
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
1μA ICBO
Emitter Base Voltage (VEBO) :
6V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
hFE Min :
200
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Published :
2005
Transistor Type :
NPN
Datasheets
2SC6043-AE
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC6043-AE from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, 2SC6043-AE pinout, 2SC6043-AE datasheet PDF, 2SC6043-AE amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC6043-AE ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC6043-AE


NPN 150°C TJ 1μA ICBO NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2SC6043-AE Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

2SC6043-AE Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V


2SC6043-AE Applications


There are a lot of ON Semiconductor
2SC6043-AE applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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