2SC5706-TL-E
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- Mfr.Part #
- 2SC5706-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TPFA
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Transition Frequency :
- 400MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 400MHz
- hFE Min :
- 200
- Max Collector Current :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 5.5mm
- JESD-609 Code :
- e6
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 800mW
- REACH SVHC :
- Unknown
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Height :
- 2.3mm
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 2A
- Length :
- 6.5mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- 2SC5706
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 800mW
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Frequency :
- 400MHz
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 160mV
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2005
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Terminations :
- 2
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC5706-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SC5706-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 160mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 400MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 5A volts.
2SC5706-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-TL-E Applications
There are a lot of ON Semiconductor
2SC5706-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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