2SC5706-H

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Mfr.Part #
2SC5706-H
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 50V 5A TP
Stock
13,943
In Stock :
13,943

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Published :
2012
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Collector Emitter Breakdown Voltage :
50V
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
1μA ICBO
Gain Bandwidth Product :
400MHz
Mounting Type :
Through Hole
Factory Lead Time :
2 Weeks
Collector Emitter Voltage (VCEO) :
50V
Collector Base Voltage (VCBO) :
100V
Transition Frequency :
400MHz
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 7 hours ago)
REACH SVHC :
No SVHC
Element Configuration :
Single
Pin Count :
3
Operating Temperature :
150°C TJ
Base Part Number :
2SC5706
Max Power Dissipation :
800mW
Emitter Base Voltage (VEBO) :
6V
Pbfree Code :
yes
Transistor Type :
NPN
Surface Mount :
No
Packaging :
Bulk
Frequency :
400MHz
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
240mV @ 100mA, 2A
Number of Terminations :
3
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
NPN
Power Dissipation :
800mW
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Number of Elements :
1
Collector Emitter Saturation Voltage :
160mV
Halogen Free :
Halogen Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e6
Max Collector Current :
5A
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC5706-H from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:2SC5706, Number of Pins:3, Number of Terminations:3, 2SC5706-H pinout, 2SC5706-H datasheet PDF, 2SC5706-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC5706-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC5706-H


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SC5706-H Overview


This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 160mV.A VCE saturation (Max) of 240mV @ 100mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 400MHz.A maximum collector current of 5A volts is possible.

2SC5706-H Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz


2SC5706-H Applications


There are a lot of ON Semiconductor
2SC5706-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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