2SC5706-H
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- Mfr.Part #
- 2SC5706-H
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TP
- Stock
- 13,943
- In Stock ：
- 13,943
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Published :
- 2012
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Gain Bandwidth Product :
- 400MHz
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 400MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 7 hours ago)
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SC5706
- Max Power Dissipation :
- 800mW
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Surface Mount :
- No
- Packaging :
- Bulk
- Frequency :
- 400MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 2A
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 800mW
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 160mV
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e6
- Max Collector Current :
- 5A
- Datasheets
- 2SC5706-H
2SC5706-H Documents
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC5706-H Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 160mV.A VCE saturation (Max) of 240mV @ 100mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 400MHz.A maximum collector current of 5A volts is possible.
2SC5706-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-H Applications
There are a lot of ON Semiconductor
2SC5706-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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