2SC5706-E

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Mfr.Part #
2SC5706-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 50V 5A TP
Stock
2
In Stock :
2

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Lead Free :
Lead Free
Mounting Type :
Through Hole
Case Connection :
COLLECTOR
Collector Emitter Saturation Voltage :
160mV
Number of Elements :
1
Current - Collector Cutoff (Max) :
1μA ICBO
Transition Frequency :
400MHz
Base Part Number :
2SC5706
Pbfree Code :
yes
Current - Collector (Ic) (Max) :
5A
Vce Saturation (Max) @ Ib, Ic :
240mV @ 100mA, 2A
Gain Bandwidth Product :
400MHz
JESD-609 Code :
e6
Packaging :
Bulk
Surface Mount :
No
Transistor Type :
NPN
ECCN Code :
EAR99
Published :
2012
Collector Emitter Voltage (VCEO) :
50V
Transistor Application :
SWITCHING
Polarity/Channel Type :
NPN
Number of Pins :
3
Transistor Element Material :
SILICON
Max Power Dissipation :
800mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Max Collector Current :
5A
Collector Base Voltage (VCBO) :
100V
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
6V
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Number of Terminations :
3
Factory Lead Time :
2 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 6 hours ago)
Collector Emitter Breakdown Voltage :
50V
HTS Code :
8541.21.00.75
Pin Count :
3
Element Configuration :
Single
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Datasheets
2SC5706-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC5706-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:2SC5706, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, 2SC5706-E pinout, 2SC5706-E datasheet PDF, 2SC5706-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC5706-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC5706-E


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SC5706-E Overview


This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 160mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 400MHz.The maximum collector current is 5A volts.

2SC5706-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz


2SC5706-E Applications


There are a lot of ON Semiconductor
2SC5706-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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