2SC5659T2LN
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- Mfr.Part #
- 2SC5659T2LN
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A VMT3
- Stock
- 17,259
- In Stock ：
- 17,259
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Factory Lead Time :
- 10 Weeks
- Pin Count :
- 3
- Max Collector Current :
- 50mA
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Contact Plating :
- Copper, Tin
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 25V
- Gain Bandwidth Product :
- 300MHz
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e2
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Voltage - Rated DC :
- 25V
- hFE Min :
- 56
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Published :
- 2004
- Package / Case :
- SOT-723
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Current Rating :
- 50mA
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 150mW
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- HTS Code :
- 8541.21.00.75
- Base Part Number :
- 2SC5659
- Collector Emitter Breakdown Voltage :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 56 @ 1mA 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC5659T2LN
2SC5659T2LN Documents
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5659T2LN Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 56 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
2SC5659T2LN Features
the DC current gain for this device is 56 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz
2SC5659T2LN Applications
There are a lot of ROHM Semiconductor
2SC5659T2LN applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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