2SC5659T2LN
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- Mfr.Part #
- 2SC5659T2LN
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A VMT3
- Stock
- 17,259
- In Stock ：
- 17,259
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 56
- JESD-609 Code :
- e2
- Current Rating :
- 50mA
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 40V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 56 @ 1mA 6V
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 50mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 10 Weeks
- Max Breakdown Voltage :
- 25V
- Contact Plating :
- Copper, Tin
- Terminal Form :
- Flat
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Collector Emitter Breakdown Voltage :
- 25V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.75
- Package / Case :
- SOT-723
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Base Part Number :
- 2SC5659
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Published :
- 2004
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 25V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Power Dissipation :
- 150mW
- Mounting Type :
- Surface Mount
- Datasheets
- 2SC5659T2LN
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5659T2LN Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 56 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
2SC5659T2LN Features
the DC current gain for this device is 56 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz
2SC5659T2LN Applications
There are a lot of ROHM Semiconductor
2SC5659T2LN applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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