2SC5549,T6F(J
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- Mfr.Part #
- 2SC5549,T6F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92MOD
- Stock
- 25,048
- In Stock ：
- 25,048
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 40mA 5V
- Current - Collector (Ic) (Max) :
- 1A
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Power - Max :
- 900mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 25mA, 200mA
- Transistor Type :
- NPN
- Datasheets
- 2SC5549,T6F(J
NPN 150°C TJ 100μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC5549,T6F(J Overview
In this device, the DC current gain is 20 @ 40mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 25mA, 200mA.There is a 400V maximal voltage in the device due to collector-emitter breakdown.
2SC5549,T6F(J Features
the DC current gain for this device is 20 @ 40mA 5V
the vce saturation(Max) is 1V @ 25mA, 200mA
2SC5549,T6F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5549,T6F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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