2SC5201,F(J
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- Mfr.Part #
- 2SC5201,F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 600V 0.05A TO92MOD
- Stock
- 2,240
- In Stock ：
- 2,240
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 20mA 5V
- Published :
- 2009
- Current - Collector (Ic) (Max) :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 20mA
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC5201,F(J
NPN 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC5201,F(J Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 20mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 20mA.This device displays a 600V maximum voltage - Collector Emitter Breakdown.
2SC5201,F(J Features
the DC current gain for this device is 100 @ 20mA 5V
the vce saturation(Max) is 1V @ 500mA, 20mA
2SC5201,F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5201,F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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