2SC4793,TOA1F(J
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- Mfr.Part #
- 2SC4793,TOA1F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 230V 1A TO220NIS
- Stock
- 3,986
- In Stock ：
- 3,986
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 230V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Frequency - Transition :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Power - Max :
- 2W
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current - Collector (Ic) (Max) :
- 1A
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220NIS
- Transistor Type :
- NPN
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Datasheets
- 2SC4793,TOA1F(J
NPN 150°C TJ 1μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SC4793,TOA1F(J Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 50mA, 500mA.TO-220NIS is the supplier device package for this product.This device displays a 230V maximum voltage - Collector Emitter Breakdown.
2SC4793,TOA1F(J Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the supplier device package of TO-220NIS
2SC4793,TOA1F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SC4793,TOA1F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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