2SC4617T1G
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- Mfr.Part #
- 2SC4617T1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SC75 SOT416
- Stock
- 41,774
- In Stock ：
- 41,774
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Power - Max :
- 125mW
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SC-75, SOT-416
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- Supplier Device Package :
- SC-75, SOT-416
- Frequency - Transition :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SC4617T1G
NPN 150°C TJ 500nA ICBO SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SC4617T1G Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 60mA.Supplier device package SC-75, SOT-416 comes with the product.The device exhibits a collector-emitter breakdown at 50V.
2SC4617T1G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 60mA
the supplier device package of SC-75, SOT-416
2SC4617T1G Applications
There are a lot of Rochester Electronics, LLC
2SC4617T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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