2SC4617EBTLQ
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- Mfr.Part #
- 2SC4617EBTLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3F
- Stock
- 80,525
- In Stock ：
- 80,525
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 150mA
- Transistor Application :
- AMPLIFIER
- Published :
- 2009
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 400mV
- Gain Bandwidth Product :
- 180MHz
- Transition Frequency :
- 180MHz
- Max Power Dissipation :
- 150mW
- Base Part Number :
- 2SC4617
- Max Collector Current :
- 150mA
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Package / Case :
- SC-89, SOT-490
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 120
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400mV
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SC4617EBTLQ
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SC4617EBTLQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltages of 150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SC4617EBTLQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLQ Applications
There are a lot of ROHM Semiconductor
2SC4617EBTLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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