2SC4617EBTLQ
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- Mfr.Part #
- 2SC4617EBTLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3F
- Stock
- 80,525
- In Stock ：
- 80,525
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Max Power Dissipation :
- 150mW
- Number of Pins :
- 3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Number of Terminations :
- 3
- hFE Min :
- 120
- Gain Bandwidth Product :
- 180MHz
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 150mA
- Continuous Collector Current :
- 150mA
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- 2SC4617
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 180MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-89, SOT-490
- Datasheets
- 2SC4617EBTLQ
2SC4617EBTLQ Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SC4617EBTLQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltages of 150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SC4617EBTLQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLQ Applications
There are a lot of ROHM Semiconductor
2SC4617EBTLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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